PBSS4160T,215 datasheet

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Маркировка

PBSS4160T,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS4160T,215 Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 250 Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 220MHz ID_COMPONENTS: 1949584 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 220 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 400mW Power Dissipation: 270 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 220 MHz DC Collector/Base Gain hfe Min: 250 DC Current Gain hFE Max: 250 at 1 mA at 5 V Maximum Power Dissipation: 270 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4160T T/R Other Names: 568-4343-2, 934057667215, PBSS4160T T/R
Количество страниц

10 шт.
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113,61 KB